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    2003 May 01 3 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 THERMAL CHARACTERISTICS Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board, 1 cm2 copper area. Soldering The only recommended soldering method is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Notes 1. Only valid, if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land. 2. Pulse test: tp = 300 μs; δ = 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 405 K/W note 2 215 K/W SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF continuous forward voltage IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1000 mA; note 1; see Fig.2 480 550 mV IR reverse current VR = 5 V; note 2 5 10 μA VR = 8 V; note 2 7 20 μA VR = 15 V; note 2; see Fig.3 10 50 μA Cd diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF |